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Semiconductor Materials (18)

MOCVD Precursors

REAGENT

Hafnium(IV) ethoxide

99.9% (metals basis)

CAS:13428-80-3

Formula:Hf(OC₂H₅)₄

MW:358.73 g/mol

฿11,190.00

ข้อมูล

REAGENT

Hafnium chloride

99.5%

CAS:13499-05-3

Formula:Cl₄Hf

MW:320.30 g/mol

฿600.00

ข้อมูล

REAGENT

Hafnium(IV) oxide

Powder, 98%

CAS:12055-23-1

Formula:HfO₂

MW:210.49 g/mol

฿5,350.00

ข้อมูล

REAGENT

Hafnium(IV) fluoride

99.9% metals basis

CAS:13709-52-9

Formula:HfF₄

MW:254.48 g/mol

฿7,150.00

ข้อมูล

REAGENT

HAFNIUM N-BUTOXIDE

60% in n-butoxide, Hf: 22.6 wt%

CAS:22411-22-9

Formula:C₁₆H₃₆HfO₄

MW:470.94 g/mol

฿9,420.00

ข้อมูล

REAGENT

Hexamethyldigermanium(IV)

97%

CAS:993-52-2

Formula:C₆H₁₈Ge₂

MW:235.487 g/mol

฿52,560.00

ข้อมูล

REAGENT

Hafnium dimethylamide

97%

CAS:19962-11-9

Formula:C₈H₂₄HfN₄

MW:354.793 g/mol

฿31,550.00

ข้อมูล

REAGENT

Hafnium(IV) oxide

99.9% metals basis, D50=200nm

CAS:12055-23-1

Formula:HfO₂

MW:210.49 g/mol

฿2,990.00

ข้อมูล

REAGENT

Gadolinium(III) nitride

99.5%

CAS:25764-15-2

Formula:GdN

MW:171.26 g/mol

฿27,830.00

ข้อมูล

REAGENT

Germanium n-butoxide

97%

CAS:25063-27-8

Formula:C₁₆H₃₆GeO₄

MW:365.05 g/mol

฿5,260.00

ข้อมูล

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