Thin Film Deposition Precursors for Semiconductors (6)

REAGENT

Tris(2,2,6,6-tetramethyl-3,5-heptanedionato)bismuth(III)

99.9%

CAS:142617-53-6

Formula:C₃₃H₅₇BiO₆

MW:758.79 g/mol

฿4,482.00

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REAGENT

BIS[BIS(TRIMETHYLSILYL)AMINO]TIN II

CAS:59863-13-7

Formula:C₁₂H₃₆N₂Si₄Sn

MW:439.48 g/mol

฿10,660.00

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REAGENT

TRIS(DIMETHYLAMINO)SILANE

99.999%

CAS:15112-89-7

Formula:C₆H₁₉N₃Si

MW:161.32 g/mol

฿11,034.00

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REAGENT

1,1,3,3,5,5-Hexaethoxy-1,3,5-trisilacyclohexane

≥90%(GC)

CAS:17955-67-8

Formula:C₁₅H₃₆O₆Si₃

MW:396.70 g/mol

฿1,520.00

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REAGENT

Hexafluoroacetylacetone

98%

CAS:1522-22-1

Formula:CF₃COCH₂COCF₃

MW:208.06 g/mol

฿300.00

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REAGENT

Ammonium niobate(V) oxalate hydrate

≥99.9%

CAS:168547-43-1

Formula:C₄H₄NNbO₉H₂O

MW:302.98 g/mol

฿710.00

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REAGENT

CEF4

98%

CAS:199727-68-9

Formula:C₅₃H₉₃N₁₅O₁₃

MW:1148.4 g/mol

฿8,208.00

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REAGENT

Tantalum(V) methoxide

99%(99.99 %-Ta)

CAS:865-35-0

Formula:C₅H₁₅O₅Ta

MW:336.12 g/mol

฿5,094.00

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REAGENT

Bis(2,4-pentanedionato)nickel(II) Hydrate

≥98%

CAS:120156-44-7

Formula:C₁₀H₁₄NiO₄H₂O

MW:256.91(as Anhydrous) g/mol

฿370.00

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REAGENT

Titanium(IV) iodide

99.9% metals basis

CAS:7720-83-4

Formula:TiI₄

MW:555.49 g/mol

฿1,660.00

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