Thin Film Deposition Precursors for Semiconductors (7)

REAGENT

Tetrakis(dimethylamido)tin(IV)

99.9% trace metals basis

CAS:1066-77-9

Formula:C₈H₂₄N₄Sn

MW:295.01 g/mol

฿2,223.00

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REAGENT

Gallium(II) chloride, ultra dry, 99.999% (metals basis)

99.999% (metals basis)

CAS:24597-12-4

Formula:Ga₂Cl₄

MW:281.26 g/mol

฿3,260.00

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REAGENT

Titanium(IV) tert-butoxide

98%

CAS:3087-39-6

Formula:C₁₆H₃₆O₄Ti

MW:340.33 g/mol

฿3,260.00

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REAGENT

Tetraethyl orthosilicate

98%

CAS:78-10-4

Formula:C₈H₂₀O₄Si

MW:208.33 g/mol

฿320.00

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REAGENT

Tetraethyl orthosilicate

99.99% metals basis

CAS:78-10-4

Formula:C₈H₂₀O₄Si

MW:208.33 g/mol

฿1,560.00

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REAGENT

Tetraethyl orthosilicate

>99%(GC)

CAS:78-10-4

Formula:C₈H₂₀O₄Si

MW:208.33 g/mol

฿520.00

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REAGENT

Si5H10 CPS Cyclopentasilane

≥90%

CAS:289-22-5

Formula:H₁₀Si₅

MW:150.51 g/mol

฿290,690.00

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REAGENT

Bis(2,2',6,6'-tetramethylheptanedionato) palladium(II)

98%

CAS:15214-66-1

Formula:C₂₂H₃₈O₄Pd

MW:472.9600 g/mol

฿1,170.00

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REAGENT

eCF309

98%

CAS:2001571-40-8

Formula:C₁₈H₂₁N₇O₃

MW:383.4 g/mol

฿50,607.00

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REAGENT

Bis(2,2,6,6-tetramethyl-3,5-heptanedionato)(1,5-cyclooctadiene)ruthenium(II)

98%

CAS:329735-79-7

Formula:C₃₀H₅₀O₄Ru

MW:575.8000 g/mol

฿2,450.00

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