TriphenylsulfoniumHexafluoroantimonate

≥98%(HPLC)

Reagent Code: #244270
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CAS Number 57840-38-7

science Other reagents with same CAS 57840-38-7

blur_circular Chemical Specifications

scatter_plot Molecular Information
Weight 499.13 g/mol
Formula C₁₈H₁₅F₆SSb
inventory_2 Storage & Handling
Storage Room temperature, inert gas

description Product Description

Used primarily as a photoacid generator (PAG) in photolithography, especially in deep ultraviolet (DUV) and extreme ultraviolet (EUV) resist systems. Upon exposure to radiation, it generates strong Brønsted acids such as H[SbF6], which catalyze chemical transformations in photoresists, enabling precise pattern development in semiconductor manufacturing. Its thermal stability and efficient acid generation make it suitable for high-resolution patterning in microelectronics. Also employed in cationic polymerization processes and specialty coatings where controlled acid initiation is required.

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Size Availability Unit Price Quantity
inventory 5g
10-20 days ฿4,500.00
inventory 25g
10-20 days ฿16,150.00
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TriphenylsulfoniumHexafluoroantimonate
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Used primarily as a photoacid generator (PAG) in photolithography, especially in deep ultraviolet (DUV) and extreme ultraviolet (EUV) resist systems. Upon exposure to radiation, it generates strong Brønsted acids such as H[SbF6], which catalyze chemical transformations in photoresists, enabling precise pattern development in semiconductor manufacturing. Its thermal stability and efficient acid generation make it suitable for high-resolution patterning in microelectronics. Also employed in cationic polyme

Used primarily as a photoacid generator (PAG) in photolithography, especially in deep ultraviolet (DUV) and extreme ultraviolet (EUV) resist systems. Upon exposure to radiation, it generates strong Brønsted acids such as H[SbF6], which catalyze chemical transformations in photoresists, enabling precise pattern development in semiconductor manufacturing. Its thermal stability and efficient acid generation make it suitable for high-resolution patterning in microelectronics. Also employed in cationic polymerization processes and specialty coatings where controlled acid initiation is required.

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