Tetrakis(dimethylamino)silane

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Reagent Code: #88553
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CAS Number 1624-01-7

science Other reagents with same CAS 1624-01-7

blur_circular Chemical Specifications

scatter_plot Molecular Information
Weight 204.40 g/mol
Formula C₈H₂₄N₄Si
badge Registry Numbers
MDL Number MFCD00014859
inventory_2 Storage & Handling
Storage Room temperature, airtight, dry

description Product Description

Used primarily in the semiconductor industry as a precursor for silicon nitride and silicon dioxide thin films in chemical vapor deposition (CVD) processes. It plays a crucial role in the fabrication of microelectronic devices, ensuring high-quality, uniform layers essential for device performance. Additionally, it is employed in the production of optical coatings and as a surface modifier in various advanced materials. Its ability to deposit silicon-based films at relatively low temperatures makes it valuable for applications requiring precise control over film properties.

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Size Availability Unit Price Quantity
inventory 1g
10-20 days ฿6,480.00
inventory 5g
10-20 days ฿27,801.00

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Tetrakis(dimethylamino)silane
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Used primarily in the semiconductor industry as a precursor for silicon nitride and silicon dioxide thin films in chemical vapor deposition (CVD) processes. It plays a crucial role in the fabrication of microelectronic devices, ensuring high-quality, uniform layers essential for device performance. Additionally, it is employed in the production of optical coatings and as a surface modifier in various advanced materials. Its ability to deposit silicon-based films at relatively low temperatures makes it va

Used primarily in the semiconductor industry as a precursor for silicon nitride and silicon dioxide thin films in chemical vapor deposition (CVD) processes. It plays a crucial role in the fabrication of microelectronic devices, ensuring high-quality, uniform layers essential for device performance. Additionally, it is employed in the production of optical coatings and as a surface modifier in various advanced materials. Its ability to deposit silicon-based films at relatively low temperatures makes it valuable for applications requiring precise control over film properties.

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