Used as a precursor in the production of tantalum-based thin films for semiconductor devices, particularly in high-k dielectrics and capacitors. Enables improved performance in microelectronics due to its ability to form stable, high-quality oxide layers. Also applied in coating technologies for corrosion-resistant surfaces and in the fabrication of advanced electronic components for aerospace and medical devices. Suitable for chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes.