Bis(2,2,6,6-tetramethyl-3,5-heptanedionato)magnesium
98%
science Other reagents with same CAS 21361-35-3
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Used as a precursor in chemical vapor deposition (CVD) processes to produce magnesium-containing thin films and coatings. These films are important in the fabrication of electronic materials, including dielectrics and semiconducting layers. The compound’s high volatility and thermal stability make it suitable for deposition at moderate temperatures, ensuring uniform film growth. It is also employed in research for synthesizing magnesium oxide (MgO) nanoparticles and nanostructures, which have applications in catalysis, optics, and advanced ceramics. Additionally, it serves as a source of magnesium in organometallic reactions and materials science where controlled release of metal ions is required.
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