Used as a precursor in atomic layer deposition (ALD) for manufacturing advanced semiconductor devices. It enables the deposition of high-quality tantalum nitride (TaN) or tantalum carbonitride (TaCN) thin films, which act as diffusion barriers or conductive layers in integrated circuits. Its high reactivity with reducing agents and good volatility make it suitable for low-temperature ALD processes, ensuring excellent film uniformity and step coverage on complex nanostructures. Commonly applied in the production of dynamic random-access memory (DRAM) and logic chips to enhance device performance and reliability.