Used as a precursor in the deposition of silicon-based thin films for semiconductor manufacturing. Its high reactivity and volatility make it suitable for chemical vapor deposition (CVD) processes, where it contributes to the formation of silicon nitride or silicon carbide layers at relatively low temperatures. These layers serve as dielectrics, passivation coatings, or diffusion barriers in microelectronic devices. The compound’s dimethylamino groups enhance its stability and handling compared to more sensitive silane derivatives, allowing for improved process control in high-precision applications.