Used as a precursor in the synthesis of hafnium oxide thin films, which are essential in the production of high-k dielectric materials for semiconductor devices. It plays a crucial role in the fabrication of advanced microelectronics, including transistors and capacitors, due to its ability to form uniform and high-quality layers. Additionally, it is employed in chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes to create coatings with precise thickness and composition. Its application extends to the development of optical coatings and protective layers in various high-tech industries.