Hafnium silicide
99%
Reagent
Code: #195923
CAS Number
12401-56-8
blur_circular Chemical Specifications
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Molecular Information
Weight
234.66 g/mol
Formula
HfSi₂
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Storage & Handling
Storage
Room temperature, seal, light shielding
description Product Description
Used as a gate electrode and interconnect material in semiconductor devices, particularly in advanced complementary metal-oxide-semiconductor (CMOS) technology paired with high-k dielectrics. It offers low electrical resistivity and high thermal stability, helping improve transistor performance, scalability, and reduce gate resistance. Also applied in microelectronics as a diffusion barrier and in high-temperature coatings due to its thermal stability and resistance to oxidation. Its refractory nature makes it suitable for components exposed to extreme heat, such as in aerospace and turbine applications.
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