Used as a precursor in chemical vapor deposition (CVD) for depositing ruthenium thin films in semiconductor manufacturing. These films serve as conductive layers in advanced microelectronic devices, especially in capacitors and interconnects, due to ruthenium’s excellent electrical conductivity and thermal stability. The compound is valued for its relatively low decomposition temperature and good volatility, making it suitable for high-precision deposition processes. It is also explored in atomic layer deposition (ALD) for next-generation electronics.