Widely used in chemical vapor deposition (CVD) processes for producing thin films of ruthenium, which serve as advanced electrode materials in semiconductor devices. Its volatility and thermal stability make it ideal for depositing high-purity, conductive ruthenium layers in microelectronics, especially in dynamic random-access memory (DRAM) and other integrated circuits. Also employed as a catalyst precursor in organic synthesis, including hydrogenation and transfer hydrogenation reactions. Shows utility in academic research for developing new organometallic complexes and studying reaction mechanisms involving ruthenium.