Used as a photoacid generator (PAG) in photoresist formulations, particularly in deep ultraviolet (DUV) and electron-beam lithography. Upon exposure to radiation, it releases strong acid that catalyzes chemical transformations in the resist, enabling precise pattern development in semiconductor manufacturing. Commonly applied in positive and negative tone resists for microelectronics and integrated circuit fabrication. Also utilized in some cationic polymerization processes and advanced coating technologies where controlled acid initiation is required.