Used primarily as a photoacid generator (PAG) in advanced photoresist formulations for semiconductor manufacturing. Upon exposure to deep ultraviolet (DUV) or extreme ultraviolet (EUV) light, it releases strong acids that catalyze chemical transformations in the resist, enabling precise pattern development during lithography. Its high thermal stability and efficient acid generation make it suitable for high-resolution patterning required in microelectronics. Also employed in cationic polymerization processes and specialty coatings where controlled initiation under light exposure is needed.