This chemical is primarily used as a photoacid generator (PAG) in advanced photoresist formulations for semiconductor manufacturing. It plays a critical role in the lithography process, where it generates acid upon exposure to ultraviolet (UV) light, enabling the precise patterning of microelectronic components. Its high sensitivity and efficiency make it suitable for deep UV and extreme UV (EUV) lithography, which are essential for producing smaller and more complex integrated circuits. Additionally, its stability and compatibility with various resist materials enhance its utility in high-resolution imaging applications, contributing to the development of next-generation electronic devices.