This chemical is primarily used as a photoacid generator (PAG) in the field of photolithography, especially in the manufacturing of semiconductors and microelectronics. When exposed to ultraviolet (UV) light, it generates strong acids that catalyze the cross-linking or deprotection of polymers in photoresists. This process is crucial for creating precise patterns on silicon wafers, enabling the production of integrated circuits and other microdevices. Its efficiency in generating trifluoromethanesulfonic acid, a highly reactive and strong acid, makes it particularly valuable for high-resolution patterning. Additionally, it is utilized in advanced materials research for developing novel photoresist formulations with improved sensitivity and performance.