Bis(4-tert-butylphenyl)iodonium perfluoro-1-butanesulfonate
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This chemical is primarily used as a photoacid generator (PAG) in photolithography processes, particularly in the semiconductor and electronics industries. It plays a critical role in the production of microchips and other electronic components by generating acid upon exposure to ultraviolet (UV) light. The acid produced helps to catalyze the chemical reactions necessary for patterning photoresist materials, enabling the precise etching and deposition of layers on silicon wafers. Its high thermal stability and efficiency in generating strong acids make it suitable for advanced lithography techniques, including deep UV and extreme UV (EUV) lithography. Additionally, it is utilized in the fabrication of high-resolution displays and printed circuit boards (PCBs), where fine patterning is essential. Its compatibility with various photoresist systems ensures its widespread application in cutting-edge manufacturing processes.
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