Bis[4-(tert-butyl)phenyl]iodonium Tetra(nonafluoro-tert-butoxy)aluminate
>98.0%(T)(HPLC)
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This chemical is primarily used as a photoacid generator (PAG) in advanced photolithography processes, particularly in the semiconductor and electronics industries. Its key application lies in the production of high-resolution microchips and integrated circuits. When exposed to ultraviolet (UV) light, it generates strong acids that catalyze the chemical reactions necessary for patterning photoresist materials. This enables the precise etching of intricate circuit designs onto silicon wafers. Its thermal stability and efficiency in acid generation make it suitable for next-generation lithography techniques, such as extreme ultraviolet (EUV) lithography, which is critical for manufacturing smaller and more powerful electronic devices. Additionally, its use extends to advanced materials research, where it aids in the development of novel polymers and coatings with specialized properties.
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