(4-Iodophenyl)diphenylsulfonium triflate

Reagent Code: #73141
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CAS Number 255056-46-3

science Other reagents with same CAS 255056-46-3

blur_circular Chemical Specifications

scatter_plot Molecular Information
Weight 538.34 g/mol
Formula C₁₉H₁₄F₃IO₃S₂
thermostat Physical Properties
Melting Point 155 - 160 °C - lit.
inventory_2 Storage & Handling
Storage room temperature

description Product Description

This chemical is primarily used as a photoacid generator (PAG) in various photolithography processes, especially in the manufacturing of semiconductors and microelectronics. When exposed to ultraviolet (UV) light, it releases strong acids that catalyze the cross-linking or deprotection of polymers, enabling precise patterning on silicon wafers. Its efficiency and stability make it suitable for advanced photoresist formulations, contributing to the production of high-resolution electronic components. Additionally, it finds application in the development of advanced materials and coatings where controlled acid generation is required for curing or modification processes.

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inventory 250mg
10-20 days ฿5,373.00

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(4-Iodophenyl)diphenylsulfonium triflate
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This chemical is primarily used as a photoacid generator (PAG) in various photolithography processes, especially in the manufacturing of semiconductors and microelectronics. When exposed to ultraviolet (UV) light, it releases strong acids that catalyze the cross-linking or deprotection of polymers, enabling precise patterning on silicon wafers. Its efficiency and stability make it suitable for advanced photoresist formulations, contributing to the production of high-resolution electronic components. Addi

This chemical is primarily used as a photoacid generator (PAG) in various photolithography processes, especially in the manufacturing of semiconductors and microelectronics. When exposed to ultraviolet (UV) light, it releases strong acids that catalyze the cross-linking or deprotection of polymers, enabling precise patterning on silicon wafers. Its efficiency and stability make it suitable for advanced photoresist formulations, contributing to the production of high-resolution electronic components. Additionally, it finds application in the development of advanced materials and coatings where controlled acid generation is required for curing or modification processes.

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