Used as a highly effective photoacid generator (PAG) in advanced photolithography processes, particularly in semiconductor manufacturing. Upon exposure to deep ultraviolet (DUV) or extreme ultraviolet (EUV) light, it releases strong sulfonic acids that catalyze chemical transformations in photoresist materials, enabling precise patterning of microelectronic circuits. Its thermal stability and efficient acid generation make it suitable for high-resolution lithography required in cutting-edge chip fabrication. Also employed in cationic polymerization reactions where controlled initiation is needed under light exposure.