Used as a photoacid generator (PAG) in advanced photolithography processes, particularly in semiconductor manufacturing. Upon exposure to deep ultraviolet (DUV) or extreme ultraviolet (EUV) light, it releases a strong acid that catalyzes chemical transformations in photoresist materials, enabling precise pattern development. Its Boc-protected structure enhances solubility and stability in resist formulations, while the sulfonium cation provides efficient acid generation with good thermal stability. Commonly employed in chemically amplified resists (CARs) for high-resolution patterning in microelectronics and integrated circuit production.