10-(4-Biphenylyl)-2-isopropyl-9-oxo-9H-thioxanthenium hexafluorophosphate

95%

Reagent Code: #114971
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CAS Number 591773-92-1

science Other reagents with same CAS 591773-92-1

blur_circular Chemical Specifications

scatter_plot Molecular Information
Weight 552.511 g/mol
Formula C₂₈H₂₃F₆OPS
inventory_2 Storage & Handling
Storage room temperature, dry

description Product Description

Used primarily as a photoacid generator (PAG) in photoresist formulations for semiconductor manufacturing. It generates acid upon exposure to UV light, which helps in the patterning process during lithography. The compound is valued for its high sensitivity and efficiency in producing fine patterns on silicon wafers. Additionally, it finds application in advanced materials research for developing high-resolution imaging systems. Its stability under processing conditions makes it suitable for use in deep UV and extreme UV lithography technologies.

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Test Parameter Specification
Appearance Pink-brown powder
Purity (%) 94.5-100%
Infrared Spectrum Conforms To Structure
NMR Conforms To Structure

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Size Availability Unit Price Quantity
inventory 50g
10-20 days ฿2,880.00
inventory 10g
10-20 days ฿790.00
inventory 250g
10-20 days ฿9,680.00

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10-(4-Biphenylyl)-2-isopropyl-9-oxo-9H-thioxanthenium hexafluorophosphate
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Used primarily as a photoacid generator (PAG) in photoresist formulations for semiconductor manufacturing. It generates acid upon exposure to UV light, which helps in the patterning process during lithography. The compound is valued for its high sensitivity and efficiency in producing fine patterns on silicon wafers. Additionally, it finds application in advanced materials research for developing high-resolution imaging systems. Its stability under processing conditions makes it suitable for use in deep

Used primarily as a photoacid generator (PAG) in photoresist formulations for semiconductor manufacturing. It generates acid upon exposure to UV light, which helps in the patterning process during lithography. The compound is valued for its high sensitivity and efficiency in producing fine patterns on silicon wafers. Additionally, it finds application in advanced materials research for developing high-resolution imaging systems. Its stability under processing conditions makes it suitable for use in deep UV and extreme UV lithography technologies.

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