Bis(t-butylimido)bis(dimethylamino)molybdenum(VI)

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Reagent Code: #152091
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CAS Number 923956-62-1

science Other reagents with same CAS 923956-62-1

blur_circular Chemical Specifications

scatter_plot Molecular Information
Weight 326.33 g/mol
Formula C₁₂H₃₀MoN₄
badge Registry Numbers
MDL Number MFCD28411640
inventory_2 Storage & Handling
Storage -20°C, Sealed, Drying, Inert Gas

description Product Description

Used as a precursor in chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes to deposit molybdenum-containing thin films, such as molybdenum nitride (MoN) and molybdenum carbide (MoC) layers. These films are employed as diffusion barriers, gate electrodes, or interconnects in semiconductor manufacturing owing to their excellent thermal stability, low resistivity, and conformal deposition properties. The compound exhibits high volatility and clean thermal decomposition, ideal for precise nanoscale applications in microelectronics. Additionally, it is explored in catalytic applications, including olefin metathesis reactions and other high-oxidation-state molybdenum-mediated transformations in organic synthesis.

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Size Availability Unit Price Quantity
inventory 250mg
10-20 days ฿3,030.00
inventory 1g
10-20 days ฿11,220.00

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Bis(t-butylimido)bis(dimethylamino)molybdenum(VI)
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Used as a precursor in chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes to deposit molybdenum-containing thin films, such as molybdenum nitride (MoN) and molybdenum carbide (MoC) layers. These films are employed as diffusion barriers, gate electrodes, or interconnects in semiconductor manufacturing owing to their excellent thermal stability, low resistivity, and conformal deposition properties. The compound exhibits high volatility and clean thermal decomposition, ideal for pre

Used as a precursor in chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes to deposit molybdenum-containing thin films, such as molybdenum nitride (MoN) and molybdenum carbide (MoC) layers. These films are employed as diffusion barriers, gate electrodes, or interconnects in semiconductor manufacturing owing to their excellent thermal stability, low resistivity, and conformal deposition properties. The compound exhibits high volatility and clean thermal decomposition, ideal for precise nanoscale applications in microelectronics. Additionally, it is explored in catalytic applications, including olefin metathesis reactions and other high-oxidation-state molybdenum-mediated transformations in organic synthesis.

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