Used as a precursor in chemical vapor deposition (CVD) processes to produce ruthenium and ruthenium oxide thin films. These films are critical in semiconductor manufacturing, particularly as diffusion barriers and electrode materials in dynamic random-access memory (DRAM) and other advanced microelectronic devices. Exhibits good volatility and thermal stability, making it suitable for high-precision deposition at relatively low temperatures. Also explored in the synthesis of catalysts and in applications involving sensors and electrochemical systems due to the favorable redox properties of ruthenium.