Used primarily as a precursor in metal-organic chemical vapor deposition (MOCVD) for depositing platinum-containing thin films. These films serve as electrodes in semiconductor devices, particularly in dynamic random-access memory (DRAM) and ferroelectric random-access memory (FeRAM) structures. The compound’s volatility and thermal stability make it suitable for high-purity platinum layer deposition at relatively low temperatures. It is also explored in the synthesis of nanostructured platinum materials for catalytic applications.