Used as a precursor in metal-organic chemical vapor deposition (MOCVD) for growing niobium-containing oxide thin films, particularly in the fabrication of advanced electronic materials and dielectric layers. Its high volatility and thermal stability make it suitable for depositing uniform, high-purity niobium oxide films at relatively low temperatures. These films are applied in capacitors, gate insulators, and electrochromic devices. Also investigated for use in catalytic applications and as a dopant source in functional coatings.