Used as a precursor in metal-organic chemical vapor deposition (MOCVD) for depositing erbium-containing thin films. These films are critical in the fabrication of photonic devices, particularly in silicon-based optoelectronics where erbium provides luminescence at 1.54 µm, a wavelength ideal for telecommunications. Enables integration of light-emitting components in semiconductor circuits. Also investigated for use in doping of crystalline and amorphous materials to enhance optical performance in lasers and amplifiers. Its volatility and thermal stability make it suitable for high-purity film growth at moderate temperatures.