Widely used in semiconductor manufacturing, this chemical serves as a precursor for depositing hafnium-containing thin films via atomic layer deposition (ALD) and chemical vapor deposition (CVD). It enables the formation of high-k dielectric layers, which are critical in advanced microelectronic devices such as transistors and capacitors. Its high reactivity and volatility allow for precise, low-temperature film growth, making it suitable for fabricating next-generation integrated circuits. Additionally, it is explored in the development of metal-insulator-metal structures and gate oxides where uniformity and interface quality are essential.