Used as a precursor in chemical vapor deposition (CVD) processes for depositing zirconium-containing thin films, particularly in semiconductor manufacturing. These films serve as high-k dielectrics in advanced gate stacks and capacitors due to their high dielectric constant and thermal stability. The compound’s volatility and reactivity make it suitable for low-temperature deposition, enabling integration into sensitive electronic devices. Also explored in atomic layer deposition (ALD) for precise, conformal coatings on complex nanostructures.