Used primarily as a precursor in chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes for semiconductor manufacturing. It enables the formation of high-quality tantalum nitride (TaN) and tantalum carbonitride (TaCN) thin films, which serve as effective diffusion barriers and conductive liners in advanced integrated circuits. These films help prevent copper migration into silicon substrates, enhancing device reliability and performance. The compound’s high volatility and reactivity at low temperatures make it suitable for precise, conformal coatings in high-aspect-ratio structures, critical for sub-45 nm technology nodes. Its use supports the miniaturization and scaling of microelectronic devices, including dynamic random-access memory (DRAM) and logic chips.