Used as a precursor in metal-organic chemical vapor deposition (MOCVD) for depositing gallium-containing thin films, especially in the production of gallium nitride (GaN) and related III-nitride semiconductors. These materials are critical in optoelectronic devices such as light-emitting diodes (LEDs), laser diodes, and high-power transistors. Its high volatility and thermal stability make it suitable for precise, controlled deposition at moderate temperatures, enabling high-purity crystalline layers essential for device performance. Also explored in research for advanced electronic materials and nanotechnology applications.