Used as a precursor in atomic layer deposition (ALD) and chemical vapor deposition (CVD) processes to form hafnium-containing films, especially high-k dielectric materials in semiconductor devices. Its volatility and thermal stability make it suitable for depositing hafnium nitride or hafnium oxynitride layers at relatively low temperatures. These films are critical in advanced microelectronics, including gate stacks and diffusion barriers in integrated circuits. The diethylamino ligands facilitate clean decomposition, minimizing carbon contamination in the final film.