Used as a precursor in metal-organic chemical vapor deposition (MOCVD) for depositing zirconium-containing thin films, especially zirconia (ZrO₂) layers. These films serve as high-k dielectrics in semiconductor devices, gate insulators in transistors, and protective coatings in optical and thermal barrier applications. Its volatility and thermal stability make it suitable for low-temperature deposition processes. Also employed in the synthesis of zirconium-doped materials and advanced nanomaterials for catalysis and sensors.