Used as a precursor in metal-organic chemical vapor deposition (MOCVD) for depositing hafnium-containing oxide films, especially high-k dielectric layers in semiconductor devices. Enables the growth of HfO₂ thin films with good uniformity and thermal stability, critical for advanced gate oxides in transistors and memory devices. Also applied in atomic layer deposition (ALD) processes due to its volatility and controlled decomposition behavior. Suitable for fabricating nanoscale electronic components where precise film thickness and high dielectric constant are essential.