Used primarily as a precursor in chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes to produce tantalum oxide (Ta₂O₅) thin films. These films exhibit high dielectric constants and excellent insulating properties, making them ideal for use in semiconductor devices, dynamic random-access memory (DRAM) capacitors, and gate dielectrics in transistors. The compound is favored in microelectronics fabrication due to its good volatility and reactivity, enabling uniform and conformal coatings on complex, high-aspect-ratio structures. It is also employed in the preparation of optical coatings and protective layers where high refractive index and environmental stability are required.