Widely used as a precursor in atomic layer deposition (ALD) and chemical vapor deposition (CVD) processes for fabricating high-k dielectric films. These films are critical in semiconductor manufacturing, especially for gate oxides in advanced transistors. Offers excellent thermal stability and volatility, enabling precise, uniform thin film growth at relatively low temperatures. Preferred in microelectronics for enabling device scaling due to its ability to form high-quality hafnium-based dielectrics with low impurity levels. Also explored in the development of nanoscale electronic devices and next-generation memory technologies.