Used as a precursor in chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes for fabricating zirconium-containing thin films. These films serve as high-k dielectrics in semiconductor devices, offering excellent insulating properties and thermal stability. The compound’s high volatility and reactivity make it suitable for low-temperature deposition, enabling integration into advanced microelectronic manufacturing. It is also explored in catalysis and materials synthesis where controlled release of zirconium is required.