Used primarily as a precursor in metalorganic chemical vapor deposition (MOCVD) for depositing arsenic-containing semiconductor materials. It serves as a safer alternative to arsine gas in the production of compound semiconductors such as gallium arsenide (GaAs) and indium arsenide (InAs). Its high reactivity and controlled arsenic release make it suitable for growing high-purity epitaxial layers in optoelectronic devices like LEDs, laser diodes, and high-frequency transistors. The compound’s volatility and thermal decomposition properties allow for precise film thickness and composition control in thin-film fabrication processes.