Used as a precursor in metalorganic vapor phase epitaxy (MOVPE) for depositing gallium-containing semiconductor materials. It enables precise growth of gallium nitride (GaN) and related compound semiconductors used in optoelectronic devices such as LEDs, laser diodes, and high-power transistors. Its high volatility and thermal stability make it suitable for low-temperature deposition processes, improving crystal quality and device performance. Also explored in research for thin-film applications in advanced electronic and photonic devices.