Used primarily as a precursor in metal-organic chemical vapor deposition (MOCVD) for growing gallium-containing semiconductor layers. Essential in the production of high-performance electronic and optoelectronic devices such as light-emitting diodes (LEDs), laser diodes, and high-frequency transistors. Enables precise control of gallium incorporation in compound semiconductors like gallium nitride (GaN) and gallium arsenide (GaAs). Its high reactivity and volatility make it suitable for thin-film deposition at moderate temperatures, supporting advancements in solid-state lighting, power electronics, and telecommunications.