Used as a precursor in the production of hafnium dioxide (HfO₂) thin films through sol-gel processes and chemical vapor deposition (CVD). These films are critical in semiconductor manufacturing, particularly as high-k dielectric materials in advanced transistors and integrated circuits. Offers good thermal stability and high dielectric constant, enabling improved performance and reduced leakage current in microelectronic devices. Also employed in the synthesis of hafnia-based coatings and nanomaterials for optical and protective applications. Its reactivity with moisture allows for controlled hydrolysis to form dense, uniform oxide layers suitable for electronic and optical coatings.