Used as a precursor in chemical vapor deposition (CVD) processes to deposit thin films of ruthenium, which are essential in semiconductor manufacturing for electrode materials in dynamic random-access memory (DRAM) devices. Its volatility and thermal stability make it suitable for forming high-purity, conductive ruthenium layers at relatively low temperatures. Also employed as a catalyst or catalyst precursor in certain organic transformations, including hydrogenation and metathesis reactions, due to the catalytic properties of ruthenium in organometallic systems.