Used as a precursor in semiconductor manufacturing, particularly in chemical vapor deposition (CVD) processes to deposit silicon-containing films. Its reactivity allows for low-temperature film growth, making it suitable for advanced microelectronics where thermal budget is a concern. The presence of t-butyl groups enhances volatility and reduces unwanted particle formation, improving process control and film uniformity. Also explored in the synthesis of silicon-based nanomaterials and as a reagent in selective silicon-nitrogen bond formation in specialty organic synthesis.