Hafnium(IV) oxide
99.9% metals basis
Reagent
Code: #193771
Alias
Hafnium dioxide
CAS Number
12055-23-1
blur_circular Chemical Specifications
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Molecular Information
Weight
210.49 g/mol
Formula
HfO₂
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Registry Numbers
EC Number
235-013-2
MDL Number
MFCD00003565
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Physical Properties
Melting Point
2810 °C
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Storage & Handling
Density
9.68 g/mL at 25 °C(lit.)
Storage
Room temperature
description Product Description
Used as a high-k dielectric material in semiconductor devices, especially in advanced transistor gate stacks for integrated circuits. Enables reduction of gate leakage current while maintaining high capacitance, critical for scaling down transistors in modern microprocessors. Also applied in memory devices and logic chips. Serves as a reflective coating in extreme ultraviolet (EUV) lithography masks due to its optical properties. Utilized in optical coatings for its high refractive index and durability. Investigated for use in resistive switching memory (ReRAM) devices. Shows promise in nuclear applications as a neutron absorber due to hafnium’s high neutron capture cross-section.
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