Hafnium(IV) oxide

99.9% metals basis

Reagent Code: #193771
label
Alias Hafnium dioxide
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CAS Number 12055-23-1

blur_circular Chemical Specifications

scatter_plot Molecular Information
Weight 210.49 g/mol
Formula HfO₂
badge Registry Numbers
EC Number 235-013-2
MDL Number MFCD00003565
thermostat Physical Properties
Melting Point 2810 °C
inventory_2 Storage & Handling
Density 9.68 g/mL at 25 °C(lit.)
Storage Room temperature

description Product Description

Used as a high-k dielectric material in semiconductor devices, especially in advanced transistor gate stacks for integrated circuits. Enables reduction of gate leakage current while maintaining high capacitance, critical for scaling down transistors in modern microprocessors. Also applied in memory devices and logic chips. Serves as a reflective coating in extreme ultraviolet (EUV) lithography masks due to its optical properties. Utilized in optical coatings for its high refractive index and durability. Investigated for use in resistive switching memory (ReRAM) devices. Shows promise in nuclear applications as a neutron absorber due to hafnium’s high neutron capture cross-section.

shopping_cart Available Sizes & Pricing

Size Availability Unit Price Quantity
inventory 2g
10-20 days ฿900.00
inventory 10g
10-20 days ฿3,360.00
inventory 50g
10-20 days ฿14,960.00
inventory 250g
10-20 days ฿70,550.00

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