Used primarily as a precursor in the synthesis of barium-containing thin films via chemical vapor deposition (CVD) or atomic layer deposition (ALD). These films are essential in the fabrication of advanced electronic materials, including high-k dielectrics and ferroelectric layers in semiconductor devices. The compound’s volatility and thermal stability make it suitable for depositing barium oxide or barium titanate films at relatively low temperatures. It is also employed in research settings for developing superconducting materials and electroceramics where precise barium stoichiometry is critical.