Used as a photoacid generator (PAG) in advanced photolithography processes, particularly in semiconductor manufacturing. Upon exposure to deep ultraviolet (DUV) or extreme ultraviolet (EUV) light, it releases strong acid, enabling precise patterning of microelectronic circuits. Its high thermal stability and efficient acid generation make it suitable for resist formulations requiring high resolution and low outgassing. Also applied in cationic polymerization reactions where controlled initiation is needed under light exposure.