Titanium(IV) bromide

98%

Reagent Code: #242220
label
Alias Titanium tetrabromide
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CAS Number 7789-68-6

science Other reagents with same CAS 7789-68-6

blur_circular Chemical Specifications

scatter_plot Molecular Information
Weight 367.48 g/mol
Formula TiBr₄
badge Registry Numbers
MDL Number MFCD00011265
thermostat Physical Properties
Melting Point 38-40 °C (lit.)
Boiling Point 230 °C (lit.)
inventory_2 Storage & Handling
Density 3.25 g/mL at 25 °C (lit.)
Storage Room temperature, airtight, dry

description Product Description

Used primarily in research and specialized chemical synthesis, this compound serves as a catalyst or reagent in halogenation reactions. It is also employed in the preparation of other titanium-based compounds and in the development of materials for electronic and optical applications. Due to its reactivity with moisture, it is handled under anhydrous conditions in controlled environments. Its role in vapor deposition processes has been explored for creating thin films in semiconductor manufacturing.

shopping_cart Available Sizes & Pricing

Size Availability Unit Price Quantity
inventory 1g
10-20 days ฿1,690.00
inventory 5g
10-20 days ฿4,360.00
inventory 25g
10-20 days ฿16,290.00

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Titanium(IV) bromide
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Used primarily in research and specialized chemical synthesis, this compound serves as a catalyst or reagent in halogenation reactions. It is also employed in the preparation of other titanium-based compounds and in the development of materials for electronic and optical applications. Due to its reactivity with moisture, it is handled under anhydrous conditions in controlled environments. Its role in vapor deposition processes has been explored for creating thin films in semiconductor manufacturing.

Used primarily in research and specialized chemical synthesis, this compound serves as a catalyst or reagent in halogenation reactions. It is also employed in the preparation of other titanium-based compounds and in the development of materials for electronic and optical applications. Due to its reactivity with moisture, it is handled under anhydrous conditions in controlled environments. Its role in vapor deposition processes has been explored for creating thin films in semiconductor manufacturing.

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