Tetrakis(ethylmethylamino)zirconium(IV)
≥99.99% trace metals basis
science Other reagents with same CAS 175923-04-3
blur_circular Chemical Specifications
description Product Description
Used as a precursor in the chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes to create thin films of zirconium oxide. These films are essential in the semiconductor industry for manufacturing high-k dielectric materials in advanced electronic devices. It also finds application in the production of coatings that enhance the thermal and chemical stability of various materials. Additionally, it is employed in research and development for synthesizing novel zirconium-based compounds with potential uses in catalysis and material science.
format_list_bulleted Product Specification
| Test Parameter | Specification |
|---|---|
| Appearance | Colorless to Yellow Liquid |
| Purity (Based on Trace Metal Analysis) | 99.99-100 |
| Trace Metal Analysis (ppm) | 0-100 |
| Infrared Spectrum | Conforms to Structure |
| NMR | Conforms to Structure |
shopping_cart Available Sizes & Pricing
Cart
No products