Tetrakis(ethylmethylamino)zirconium(IV)

≥99.99% trace metals basis

Reagent Code: #91292
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CAS Number 175923-04-3

science Other reagents with same CAS 175923-04-3

blur_circular Chemical Specifications

scatter_plot Molecular Information
Weight 323.63 g/mol
Formula C₁₂H₃₂N₄Zr
badge Registry Numbers
MDL Number MFCD03427131
thermostat Physical Properties
Boiling Point 81 °C at 0.1 mmHg (lit.)
inventory_2 Storage & Handling
Density 1.049 g/mL at 25 °C (lit.)
Storage room temperature

description Product Description

Used as a precursor in the chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes to create thin films of zirconium oxide. These films are essential in the semiconductor industry for manufacturing high-k dielectric materials in advanced electronic devices. It also finds application in the production of coatings that enhance the thermal and chemical stability of various materials. Additionally, it is employed in research and development for synthesizing novel zirconium-based compounds with potential uses in catalysis and material science.

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Test Parameter Specification
Appearance Colorless to Yellow Liquid
Purity (Based on Trace Metal Analysis) 99.99-100
Trace Metal Analysis (ppm) 0-100
Infrared Spectrum Conforms to Structure
NMR Conforms to Structure

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Size Availability Unit Price Quantity
inventory 5g
10-20 days ฿17,640.00

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Tetrakis(ethylmethylamino)zirconium(IV)
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Used as a precursor in the chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes to create thin films of zirconium oxide. These films are essential in the semiconductor industry for manufacturing high-k dielectric materials in advanced electronic devices. It also finds application in the production of coatings that enhance the thermal and chemical stability of various materials. Additionally, it is employed in research and development for synthesizing novel zirconium-based compounds

Used as a precursor in the chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes to create thin films of zirconium oxide. These films are essential in the semiconductor industry for manufacturing high-k dielectric materials in advanced electronic devices. It also finds application in the production of coatings that enhance the thermal and chemical stability of various materials. Additionally, it is employed in research and development for synthesizing novel zirconium-based compounds with potential uses in catalysis and material science.

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