Tetrakis(dimethylamino)titanium(IV)

99.9% metals basis

Reagent Code: #68475
label
Alias TDMAT;Tetrakis(dimethylamino)titanium(IV);Tetrakis(dimethylamino)titanium
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CAS Number 3275-24-9

science Other reagents with same CAS 3275-24-9

blur_circular Chemical Specifications

scatter_plot Molecular Information
Weight 224.18 g/mol
Formula C₈H₂₄N₄Ti
badge Registry Numbers
MDL Number MFCD00014861
thermostat Physical Properties
Melting Point 4 °C
Boiling Point 50 °C/0.5 mmHg (lit.)
inventory_2 Storage & Handling
Density 0.947 g/mL at 25 °C (lit.)
Storage Room temperature, dry, sealed, inert gas

description Product Description

Tetrakis(dimethylamino)titanium(IV) is primarily used in the field of chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes. It serves as a precursor for depositing titanium-containing thin films, which are essential in the semiconductor industry for manufacturing integrated circuits and other electronic components. The compound is particularly valued for its ability to form high-purity titanium nitride (TiN) films, which are used as diffusion barriers and conductive layers in microelectronic devices. Additionally, it is employed in the production of optical coatings and as a catalyst in various organic synthesis reactions, contributing to the development of advanced materials and chemical products.

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Test Parameter Specification
APPEARANCE Light Yellow to Dark Yellow and LightOrange to Orange and Orange-Yellow Liquid
Purity (Based on Trace Metal Analysis)(%) 99.9-100
Infrared Spectrum Conforms to Structure
NMR Conforms to Structure

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Size Availability Unit Price Quantity
inventory 1g
10-20 days ฿11,970.00

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Tetrakis(dimethylamino)titanium(IV)
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Tetrakis(dimethylamino)titanium(IV) is primarily used in the field of chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes. It serves as a precursor for depositing titanium-containing thin films, which are essential in the semiconductor industry for manufacturing integrated circuits and other electronic components. The compound is particularly valued for its ability to form high-purity titanium nitride (TiN) films, which are used as diffusion barriers and conductive layers in micro

Tetrakis(dimethylamino)titanium(IV) is primarily used in the field of chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes. It serves as a precursor for depositing titanium-containing thin films, which are essential in the semiconductor industry for manufacturing integrated circuits and other electronic components. The compound is particularly valued for its ability to form high-purity titanium nitride (TiN) films, which are used as diffusion barriers and conductive layers in microelectronic devices. Additionally, it is employed in the production of optical coatings and as a catalyst in various organic synthesis reactions, contributing to the development of advanced materials and chemical products.

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